HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRONMOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER. International Journal of Geomate, [S. l.], v. 17, n. 61, p. 28–34, 2019. Disponível em: https://geomatejournal.com/geomate/article/view/2103. Acesso em: 10 oct. 2026.