TAIKI KOZAKAI; ITSUKI TAKAGI; SHUN NAKAJIMA; HIROHISA TAGUCHI. HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRONMOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER. GEOMATE Journal, [S. l.], v. 17, n. 61, p. 28–34, 2019. Disponível em: https://geomatejournal.com/geomate/article/view/2103. Acesso em: 3 may. 2024.