Taiki Kozakai, Itsuki Takagi, Shun Nakajima and Hirohisa Taguchi (2019) “HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRONMOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER”, GEOMATE Journal, 17(61), pp. 28–34. Available at: https://geomatejournal.com/geomate/article/view/2103 (Accessed: 18 July 2024).