Taiki Kozakai, Itsuki Takagi, Shun Nakajima, and Hirohisa Taguchi, “HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRONMOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER”, INTERNATIONAL JOURNAL OF GEOMATE, vol. 17, no. 61, pp. 28–34, Feb. 2019.