SPICE MODEL OF DRAIN INDUCED BARRIER LOWERING IN SYMMETRIC JUNCTIONLESS DOUBLE GATE MOSFET

Authors

  • Hakkee Jung

Keywords:

Junctionless double gate, Threshold voltage, DIBL, Static feedback coefficient

Abstract

A SPICE model of Drain Induced Barrier Lowering (DIBL) has been proposed for a symmetric junctionlessdouble gate (JLDG) MOSFET. For this purpose, the potential distribution in the channel is obtained using the Poisson equation, and the threshold voltage is determined by the third derivative (TD) method. The SPICE model of DIBL should be expressed as a function of silicon thicknesstsias well as channel length Lg, oxide thickness tox, and SPICE parameter η  such asσD=AηLg-3tsi2tox dueto the effect of silicon thickness on carrier transport in a nanostructure JLDG MOSFET,even though it is only defined by channel length and oxide thickness in SPICE model of conventional MOSFET. As a result, it is found that the proportional constant Ais 22.0 and the static feedback coefficientη is reasonably between 0.2 and 0.9. The DIBLs ​​obtained by using the threshold voltage model published in other papers show a good agreement with those of this model regardless of the channel length at 20 nm or more, but the DIBLs ​​of the other models are different at the sub-20 nm channel lengths from one another due to approximations of each other. Also we show that the DIBL for JLDG MOSFET is smaller than junction-based double gate MOSFET.

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Published

2019-03-29

How to Cite

Hakkee Jung. (2019). SPICE MODEL OF DRAIN INDUCED BARRIER LOWERING IN SYMMETRIC JUNCTIONLESS DOUBLE GATE MOSFET. GEOMATE Journal, 16(55), 20–27. Retrieved from https://geomatejournal.com/geomate/article/view/2470